STTH212S STMicroelectronics, STTH212S Datasheet - Page 5

• Manufacturer Part Number: STTH212S
• Description: DIODE ULT FAST 1200V 2A SMC
• Manufacturer: STMicroelectronics

Specifications of STTH212S

• Voltage - Forward (vf) (max) @ If: 1.75V @ 2A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.75 V
• Recovery Time: 75 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 40 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4754-2

STTH212
Figure 11. Transient peak forward voltage
Figure 13. Junction capacitance versus
Figure 15. Thermal resistance junction to
100
80
70
60
50
40
30
20
10
30
28
26
24
22
20
18
16
14
12
10
10
0
8
6
4
2
0
1
0
0
1
R
C(pF)
V (V)
th(j-a)
FP
T
I
j
F
=125°C
10
=I
1
F( AV)
(°C/W)
versus dI
reverse voltage applied (typical
values)
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, e
20
2
30
3
10
40
dl /dt(A/µs)
4
F
F
V (V)
S (cm )
/dt (typical values)
Cu
R
50
5
2
60
6
100
CU
70
7
= 35µm)
80
8
V
osc
F=1MHz
T
DO-201AD
=30mV
j
=25°C
90
9
RMS
1000
100
10
Figure 12. Forward recovery time versus dI
Figure 14. Thermal resistance versus lead
Figure 16. Thermal resistance junction to
110
100
420
400
380
360
340
320
300
280
260
240
220
200
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0
5
t (ns)
R
R
FR
th(j-a)
th(j-a)
0.5
(°C/W)
(°C/W)
(typical values)
length
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, e
1.0
20
10
1.5
SMC
2.0
40
dl /dt(A/µs)
L
S (cm )
SMB
F
Leads
Cu
2.5
15
(mm)
1 Electrical characteristics
2
R
60
3.0
R
th(j-a)
th(j-l)
cu
3.5
= 35 µm)
20
V
FR
80
4.0
=1. 1 x V
T
I
j
F
=125° C
=I
F( AV)
F
DO201-AD
m ax.
4.5
100
5.0
25
F
/dt
5/9