DSEP8-12A IXYS, DSEP8-12A Datasheet
DSEP8-12A
Manufacturer Part Number
DSEP8-12A
Description
DIODE 1200V 10A TO220AC
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEP8-12A.pdf
(2 pages)
Specifications of DSEP8-12A
Voltage - Forward (vf) (max) @ If
2.94V @ 10A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
60µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
40ns
Mounting Type
Through Hole
Package / Case
TO-220AC
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
115
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
40
Vf, Max, Tvj =150°c, (v)
1.96
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
2.50
Package Style
TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEP8-12A
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
DSEP8-12A
Manufacturer:
IXYS
Quantity:
3 000
Part Number:
DSEP8-12A
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
HiPerFRED
with soft recovery
V
1200
Symbol
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
FRMS
FAVM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
tot
F
RSM
AS
thJC
thCH
d
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 ms, Duty Cycle < 2.0 %
RRM
V
Conditions
T
T
T
I
V
T
mounting torque
typical
Conditions
T
T
I
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 10 A;
= 1 A; -di/dt = 50 A/ms;
= 115°C; rectangular, d = 0.5
= 8 A; L = 180 µH
= 1.25·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
TM
Type
DSEP 8-12A
R
p
VJ
T
T
typ.; f = 10 kHz; repetitive
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 12 A; -di
Epitaxial Diode
= V
= V
= 150°C
= 25°C
RRM
RRM
F
/dt = 100 A/ms
typ.
0.5
40
4
Characteristic Values
-55...+175
-55...+150
0.4...0.6
Maximum Ratings
175
6.9
0.8
A
10
max.
35
40
60
0.25
1.96
2.94
2
2.5
60
K/W
K/W
Nm
mA
mJ
°C
°C
°C
mA
ns
W
A
A
A
A
V
V
A
g
C
I
V
t
TO-220 AC
A = Anode, C = Cathode, TAB = Cathode
Features
Applications
Advantages
Dimensions see outlines.pdf
FAV
rr
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
C
RM
RM
= 10 A
= 1200 V
= 40 ns
A
-values
reduces:
DSEP 8-12A
C (TAB)
1 - 2
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DSEP8-12A Summary of contents
Page 1
... Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved A Maximum Ratings ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case NOTE: Fig Fig. 6 shows typical values © 2000 IXYS All rights reserved 2000 T = 100° 600V R nC 1500 20A 10A 1000 500 ...