MUR1100EG ON Semiconductor, MUR1100EG Datasheet - Page 2

• Manufacturer Part Number: MUR1100EG
• Description: DIODE ULTRA FAST 1A 1000V DO-41
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR1100EG

• Voltage - Forward (vf) (max) @ If: 1.75V @ 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.75 V
• Recovery Time: 100 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 35 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Current, Forward: 1 A
• Current, Reverse: 600 μA
• Current, Surge: 35 A
• Package Type: Case 59
• Primary Type: Rectifier
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Time, Recovery: 100 ns
• Voltage, Forward: 1.75 V
• Voltage, Reverse: 1000 V
• Dc: 07+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MUR1100EG; MUR1100EGOS

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*These packages are inherently Pb−Free.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
(i
(i
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
(Rated dc Voltage, T
Maximum Reverse Recovery Time
(I
(I
Maximum Forward Recovery Time
(I
Controlled Avalanche Energy (See Test Circuit in Figure 6)
MUR180E
MUR180EG
MUR180ERL
MUR180ERLG
MUR1100E
MUR1100EG
MUR1100ERL
MUR1100ERLG
F
F
F
F
F
= 1.0 Amp, T
= 1.0 Amp, T
= 1.0 Amp, di/dt = 50 Amp/ms)
= 0.5 Amp, i
= 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)
R
J
J
= 1.0 Amp, I
= 150°C)
= 25°C)
Device
J
J
= 100°C)
= 25°C)
REC
Charateristics
= 0.25 Amp)
MUR180E, MUR1100E
http://onsemi.com
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Package
2
Symbol
W
R
v
AVAL
i
t
qJA
t
R
rr
fr
F
5000 / Tape & Reel
5000 / Tape & Reel
1000 Units / Bag
1000 Units / Bag
See Note 3
Shipping
Value
1.50
1.75
600
100
10
75
75
10
†
°C/W
Unit
mJ
mA
ns
ns
V