STTH1210G-TR STMicroelectronics, STTH1210G-TR Datasheet - Page 5
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STTH1210G-TR
Manufacturer Part Number
STTH1210G-TR
Description
DIODE ULTRA FAST 1000V 12A D2PAK
Manufacturer
STMicroelectronics
Datasheet
1.STTH1210G-TR.pdf
(11 pages)
Specifications of STTH1210G-TR
Voltage - Forward (vf) (max) @ If
2V @ 12A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
12A
Current - Reverse Leakage @ Vr
10µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
90ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-6093-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STTH1210
Figure 11. Forward recovery time versus
Figure 13. Thermal resistance junction to
80
70
60
50
40
30
20
10
700
600
500
400
300
200
0
0
R
0
th(j-a)
t (ns)
fr
(°C/W)
5
dI
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
100
F
10
/dt (typical values)
15
200
S
dI /dt(A/µs)
CU
F
20
(cm²)
cu
= 35 µm)
300
25
V
FR
30
= 1.5 x V
T
I
400
F
j
=125°C
= I
F(AV)
D²PAK
F
35
max.
500
40
Figure 12. Junction capacitance versus
100
10
1
1
C(pF)
reverse voltage applied (typical
values)
10
V (V)
R
100
Characteristics
V
osc
F=1MHz
T
=30mV
j
=25°C
RMS
1000
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