MMBD6050 Fairchild Semiconductor, MMBD6050 Datasheet
MMBD6050
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MMBD6050 Summary of contents
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... Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2007 Fairchild Semiconductor Corporation MMBD6050 Rev MARKING T = 25°C unless otherwise noted A Parameter Parameter T =25°C unless otherwise noted A Test Conditions I = 100µA R ...
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... Forward Current, I Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA ° Ta 1.4 1.2 1.0 0.8 0 100 Forw ard C urrent, I Figure 5. Forward Voltage vs Forward Current 800 mA MMBD6050 Rev ° 300 250 200 150 100 100 10 [uA] R Figure 2. Reverse Current vs Reverse Voltage Ta ° ...
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... Typical Performance Characteristics 4.0 ° Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - MMBD6050 Rev. A (Continued) 400 300 200 100 Figure 8. Average Rectified Current (I versus Ambient Temperature ( 100 150 Ambient Temperature ° F(AV www.fairchildsemi.com ...
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... Mechanical Dimensions ±0.03 0.40 0.95 MMBD6050 Rev. A SOT-23 ±0.03 0.40 0.96~1.14 2.90 ±0.10 ±0.03 ±0.03 0.95 1.90 ±0.03 0.508REF 4 0.03~0.10 0.38 REF +0.05 0.12 –0.023 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete MMBD6050 Rev. A PowerSaver™ GTO™ ® PowerTrench HiSeC™ Programmable Active Droop™ i-Lo™ ® ...