ES1B Fairchild Semiconductor, ES1B Datasheet - Page 2

• Manufacturer Part Number: ES1B
• Description: DIODE FAST 1A 100V SMA
• Manufacturer: Fairchild Semiconductor

Specifications of ES1B

• Voltage - Forward (vf) (max) @ If: 920mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15ns
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.92 V
• Recovery Time: 15 ns
• Forward Continuous Current: 1 A @ Ta=120C
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 1.47 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 50 C
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 1A
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 30A
• Forward Voltage: 0.92V
• Operating Temp Range: -50C to 150C
• Package Type: DO-214AC
• Rev Recov Time: 15ns
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Forward Current Derating Curve
Figure 3. Non-Repetitive Surge Current
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
1.25
0.75
0.25
30
25
20
15
10
1.5
0.5
5
0
1
0
1
50
NONINDUCTIVE
0
50
NONINDUCTIVE
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
50V
(approx)
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
2
25
Reverse Recovery Time Characterstic and Test Circuit Diagram
Ambient Temperature [ºC]
Number of Cycles at 60Hz
50
DUT
5
75
50
NONINDUCTIVE
10
100
OSCILLOSCOPE
(Note 1)
20
14
12
10
8
6
4
2
0
125
0.1
Pulse
Generator
(Note 2)
50
150
Figure 5. Total Capacitance
(-)
(+)
100
175
Reverse Voltage, V
1
Figure 2. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
1000
10
0.001
100
R
0.01
0.1
-0.25A
10
+0.5A
0.1
[V]
-1.0A
10
1
1
0
0.4
0
Percent of Rated Peak Reverse Voltage [%]
20
0.6
100
1.0cm
40
Forward Voltage, V
trr
0.8
60
T = 25 C
Pulse Width = 300 s
2% Duty Cycle
A
T = 125 C
T = 75 C
SET TIME BASE FOR
T = 25 C
A
A
A
º
80
5/ 10 ns/ cm
1
º
º
º
100
F
[V]
1.2
120
ES1A-ES1D, Rev. C1
140
1.4