EGP10A Fairchild Semiconductor, EGP10A Datasheet - Page 125
![DIODE FAST GPP 1A 50V DO-41](/photos/5/24/52465/261-do-41_sml.jpg)
EGP10A
Manufacturer Part Number
EGP10A
Description
DIODE FAST GPP 1A 50V DO-41
Manufacturer
Fairchild Semiconductor
Specifications of EGP10A
Voltage - Forward (vf) (max) @ If
950mV @ 1A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 50V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP10A
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP10A
Manufacturer:
VISHAY/威世
Quantity:
20 000
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JFETs (Continued)
BF244C
BF245C
2N5639
PN4391
2N5638
BF246A
J113
J112
J111
J201
PF5102
PN4117
PN4117A
PF5103
PN4118
J202
PN4093
PN4119
PN4092
U1898
PN4091
U1897
KSK30
TO-92 P-Channel
2N3820
J270
J177
J176
J271
P1087
J175
P1086
J174
2N5460
Products
BV
(V)
30
30
30
30
30
30
35
35
35
40
40
40
40
40
40
40
40
40
40
40
40
40
50
20
30
30
30
30
30
30
30
30
40
GDS
Dissipation
Power
(mW)
350
350
625
625
625
625
625
625
625
625
625
350
350
625
350
625
625
350
625
625
625
625
100
350
350
350
350
350
350
350
350
350
350
P
D
Min (V)
0.75
0.5
0.5
0.6
0.5
0.3
0.7
0.6
0.6
1.2
0.8
0.4
0.5
0.8
1.5
–
–
3
1
1
2
5
–
–
3
–
5
4
1
2
2
5
1
Typ (V) Max (V) @ I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
14.5
GS
1.5
1.6
1.8
1.8
2.7
2.5
4.5
10
12
10
10
10
10
10
8
8
8
3
5
3
4
5
6
7
7
5
8
2
4
5
6
6
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
0.1
–
–
1
1
1
1
1
1
(µA) @ V
2-120
Discrete Power Products –
15
15
20
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
15
15
15
15
15
DS
–
–
5
5
5
(V) Min (mA) Max (mA) @V
0.03
0.03
0.08
0.2
0.9
0.2
0.3
0.3
1.5
12
12
25
50
50
30
20
10
15
15
30
30
10
20
2
5
4
8
2
2
6
5
7
1
0.09
0.09
0.24
150
100
I
4.5
0.6
6.5
25
25
80
20
40
15
15
20
25
50
60
DSS
–
–
–
–
–
–
–
–
–
–
–
–
1
5
DS
15
15
20
20
20
15
15
15
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
20
15
20
15
15
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.07
0.08
3.5
7.5
0.1
0.8
–
3
–
–
–
8
–
–
–
–
–
–
–
–
–
–
–
6
–
–
8
–
–
–
–
1
GFS
0.21
0.21
0.25
0.33
6.5
15
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
4
100
300
150
125
R
(Ω)
250
60
30
30
50
30
80
50
50
30
30
75
85
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0002
0.0002
0.0002
0.001
0.001
0.001
0.001
0.001
D
(µA)
0.01
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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