EGP10F Fairchild Semiconductor, EGP10F Datasheet - Page 100

• Manufacturer Part Number: EGP10F
• Description: DIODE FAST GPP 1A 300V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of EGP10F

• Voltage - Forward (vf) (max) @ If: 1.25V @ 1A
• Voltage - Dc Reverse (vr) (max): 300V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

www.fairchildsemi.com
Small Signal Transistors – Digital Transistors (Continued)
FJX3012R
FJX3001R
FJX3002R
FJX3003R
FJX3004R
FJX3005R
FJX3006R
FJX3007R
FJX3008R
FJX3013R
FJX3014R
FJX3015R
SOT-323 PNP Configuration
FJX4009R
FJX4010R
FJX4011R
FJX4012R
FJX4001R
FJX4002R
FJX4003R
FJX4004R
FJX4005R
FJX4006R
FJX4007R
FJX4008R
FJX4013R
FJX4014R
TO-92 NPN Configuration
FJN3309R
FJN3310R
FJN3312R
FJN3301R
FJN3302R
FJN3303R
FJN3304R
Products
V
(V)
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
CEO
V
(V)
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
4.7
4.7
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
4.7
4.7
R
47
10
22
47
10
22
47
10
22
47
10
22
47
10
22
47
10
47
10
22
47
1
(KΩ)
4.7
4.7
4.7
R
10
22
47
10
47
47
22
47
47
10
10
22
47
10
47
47
22
47
47
10
22
47
–
–
–
–
–
–
–
–
2
Min
100
100
100
100
100
100
100
100
20
30
56
68
30
68
68
56
68
68
33
20
30
56
68
30
68
68
56
68
68
20
30
56
68
2-95
Discrete Power Products –
Max
600
600
600
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
10
10
10
10
1
5
5
5
5
5
5
5
5
5
1
1
1
1
5
5
5
5
5
5
5
5
1
1
1
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
(mA)