S2G-E3/52T Vishay, S2G-E3/52T Datasheet - Page 3

• Manufacturer Part Number: S2G-E3/52T
• Description: DIODE GPP 1.5A 400V SMB
• Manufacturer: Vishay

Specifications of S2G-E3/52T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.15V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 2000 ns (Typ)
• Forward Continuous Current: 1.5 A
• Max Surge Current: 50 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.15V
• Reverse Recovery Time Trr Max: 2µs
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 400V
• Avg. Forward Curr (max): 1.5A
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 1.15V
• Operating Temp Range: -55C to 150C
• Package Type: SMB
• Rev Recov Time: 2000ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: S2G-E3/52TGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88712
Revision: 08-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
T
J
= 125 °C
Instantaneous Forward Voltage (V)
0.5
20
T
J
= 150 °C
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
T
0.7
40
J
= 150 °C
T
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J
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= 25 °C
T
J
= 125 °C
0.9
60
T
J
DO-214AA (SMB)
= 25 °C
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
1.1
80
Cathode Band
0.008 (0.2)
0 (0)
100
1.3
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.086 (2.18) MIN.
100
100
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Mounting Pad Layout
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.220 REF.
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
0.085 (2.159) MAX.
1
S2A thru S2M
10
10
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100
100
3