BYG21MHE3/TR3 Vishay, BYG21MHE3/TR3 Datasheet - Page 3

• Manufacturer Part Number: BYG21MHE3/TR3
• Description: DIODE 1.5A 1000V 120NS DO-214AC
• Manufacturer: Vishay

Specifications of BYG21MHE3/TR3

• Voltage - Forward (vf) (max) @ If: 1.6V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 1000V
• Diode Type: Avalanche
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Document Number: 88961
Revision: 11-Apr-08
120
100
100
80
60
40
20
Figure 3. Reverse Current vs. Junction Temperature
25
20
15
10
10
5
0
0
1
Figure 5. Diode Capacitance vs. Reverse Voltage
0.1
25
25
V
R
= V
50
50
RRM
Junction Temperature (°C)
Reverse Voltage (V)
1
75
75
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P
at 80 % V
R
- Limit
100
100
10
R
V
P
at 100 % V
R
R
= V
- Limit
125
125
f = 1 MHz
RRM
R
150
150
100
Figure 6. Max. Reverse Recovery Charge vs. Forward Current
1000
100
200
150
100
50
10
0
1
10
0
-5
t
t
t
t
t
P
P
P
P
P
t
Vishay General Semiconductor
125 K/W DC
/T = 0.1
/T = 0.05
/T = 0.02
P
/T = 0.5
/T = 0.2
/T = 0.01
10
-4
0.2
Figure 7. Thermal Response
10
-3
Forward Current (A)
BYG21K & BYG21M
Pulse Length (s)
0.4
10
-2
Single Pulse
T
10
A
I
R
0.6
-1
= 125 °C
= 0.5 A, i
10
0
T
T
T
T
A
A
R
A
A
0.8
= 100 °C
= 75 °C
= 50 °C
= 25 °C
= 0.125 A
10
1
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1.0
10
2
3