1N5062GP-E3/73 Vishay, 1N5062GP-E3/73 Datasheet - Page 3

• Manufacturer Part Number: 1N5062GP-E3/73
• Description: DIODE GPP AVAL 800V STD SOD-57
• Manufacturer: Vishay

Specifications of 1N5062GP-E3/73

• Voltage - Forward (vf) (max) @ If: 1.2V @ 1A
• Voltage - Dc Reverse (vr) (max): 800V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Diode Type: Avalanche
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 800 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 2000 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88513
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
10
0.1
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
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1.0
Pulse Width = 300 μs
1 % Duty Cycle
T
T
T
J
J
J
T
60
= 75 °C
= 25 °C
= 125 °C
J
= 25 °C
1.2
80
1.4
This datasheet is subject to change without notice.
100
1.6
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
100
100
0.1
10
10
1
1
0.01
1
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Fig. 6 - Typical Transient Thermal Impedance
1N5059GP thru 1N5062GP
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
10
1
www.vishay.com/doc?91000
V
sig
f = 1.0 MHz
10
T
J
= 50 mV
= 25 °C
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p-p
100
100
3