AGP15-800-E3/54 Vishay, AGP15-800-E3/54 Datasheet - Page 3
![DIODE AVALANCHE 1.5A 800V SMC](/photos/5/38/53862/sa_axial_series_sml.jpg)
AGP15-800-E3/54
Manufacturer Part Number
AGP15-800-E3/54
Description
DIODE AVALANCHE 1.5A 800V SMC
Manufacturer
Vishay
Datasheet
1.AGP15-400-E354.pdf
(4 pages)
Specifications of AGP15-800-E3/54
Voltage - Forward (vf) (max) @ If
1.1V @ 1.5A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
5µA @ 800V
Diode Type
Avalanche
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.1 V
Recovery Time
2000 ns
Forward Continuous Current
1.5 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88535
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current
0.01
100
0.1
10
10
Fig. 4 - Maximum Non-repetitive Reverse Avalanche
1
1
1
0
8.3 ms Single Half Sine-Wave
Percent of Rated Peak Reverse Voltage (%)
20
T
A
Number of Cycles at 60 Hz
= 55 °C
Power Dissipation
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
10
T
T
J
J
60
= 125 °C
= 25 °C
T
J
80
= 75 °C
This datasheet is subject to change without notice.
100
100
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
1000
DIA.
100
10
AGP15-400 thru AGP15-800
Fig. 5 - Typical Reverse Leakage Characteristics
10
DiodesEurope@vishay.com
Vishay General Semiconductor
100
Pulse Duration (μs)
T
J
= 25 °C
www.vishay.com/doc?91000
1000
www.vishay.com
10 000
3