BYM12-200-E3/96 Vishay, BYM12-200-E3/96 Datasheet - Page 3

• Manufacturer Part Number: BYM12-200-E3/96
• Description: DIODE UFAST 1A 200V DO-213AB
• Manufacturer: Vishay

Specifications of BYM12-200-E3/96

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1V @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, Melf
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1 V
• Recovery Time: 50 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BYM12-200-E3/97

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88581
Revision: 04-Jul-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
1.0
0.5
5.0
0.1
Figure 1. Maximum Forward Current Derating Curve
30
25
20
15
10
50
10
0
0
1
0.2
0
1
0.4
Resistive or Inductive Load
T
25
j
= 150 °C
Instantaneous Forward Voltage (V)
Pulse Width = 300 µs
1 % Duty Cycle
0.6
Number of Cycles at 60 Hz
50
Lead Temperature (°C)
0.8
75
T
8.3 ms Single Half Sine-Wave
j
= T
1.0
10
j
max.
100
BYM12-50 thru BYM12-400, EGL41A thru EGL41G
1.2
EGL41F - EGL41G
EGL41A - EGL41D
T
125
j
= 25 °C
1.4
150
1.6
175
100
1.8
1000
0.01
100
100
70
60
50
40
30
20
10
0.1
10
0.1
10
0
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
0.1
EGL41A - EGL41D
EGL41F - EGL41G
Reverse Voltage (V)
1
t - Pulse Duration (s)
40
T
T
j
j
= 25 °C
= 150 °C
1
T
j
= 100 °C
60
10
T
f = 1.0 MHz
V
j
sig
= 25 °C
10
= 50 mVp-p
80
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100
100
100
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