EGL34D-E3/98 Vishay, EGL34D-E3/98 Datasheet - Page 3

• Manufacturer Part Number: EGL34D-E3/98
• Description: DIODE 0.5A 200V 50NS MELF
• Manufacturer: Vishay

Specifications of EGL34D-E3/98

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.25V @ 500mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 500mA
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-213AA, Mini Melf
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 0.5 A
• Max Surge Current: 10 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 10A
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 200V
• Avg. Forward Curr (max): 0.5A
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 10A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 175C
• Package Type: DO-213AA
• Rev Recov Time: 50ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88580
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
2
1
1
st
nd
0.2
0
band denotes type and polarity
band denotes voltage type
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.4
1
st
Instantaneous Forward Voltage (V)
20
DO-213AA (GL34)
BAND
2
0.6
nd
Solderable Ends
BAND
T
0.022 (0.559)
0.016 (0.406)
0.145 (3.683)
0.131 (3.327)
J
0.8
= 150 °C
D2
40
[e-mail], [e-mail],
1.0
For technical questions within your region, please contact one of the following:
T
J
= 150 °C
1.2
T
T
T
BYM07-50 thru BYM07-400, EGL34A thru EGL34G
J
J
J
60
EGL34A thru EGL34D
EGL34F and EGL34G
= 125 °C
= 75 °C
= 25 °C
1.4
T
J
1.6
= 25 °C
80
This datasheet is subject to change without notice.
1.8
D2 = D1
100
2.0
+ 0
- 0.008 (0.20)
0.049 (1.25)
100
0.1
35
30
25
20
15
10
10
5
0
1
MIN.
0.01
0.1
[e-mail]
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
0.1
Mounting Pad Layout
t - Pulse Duration (s)
Reverse Voltage (V)
1
0.177 (4.5) REF.
0.079 (2.0)
1
MAX.
www.vishay.com/doc?91000
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
www.vishay.com
p-p
0.079 (2.0)
100
100
MIN.
3