US1GHE3/61T Vishay, US1GHE3/61T Datasheet - Page 3

• Manufacturer Part Number: US1GHE3/61T
• Description: DIODE 1A 400V 50NS UF SMD
• Manufacturer: Vishay

Specifications of US1GHE3/61T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1V @ 1A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88768
Revision: 27-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
0.01
0.01
0.01
100
100
100
0.1
0.1
0.1
10
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
1
0.3
0.2
0
T
US1A - US1G
Percent of Rated Peak Reverse Voltage (%)
J
= 125 °C
T
0.5
J
0.7
Instantaneous Forward Voltage (V)
= 125 °C
Instantaneous Forward Voltage (V)
20
T
0.7
T
J
J
= 150 °C
1.2
= 150 °C
T
J
T
40
= 150 °C
J
0.9
T
T
= 25 °C
J
J
[e-mail], [e-mail], [e-mail]
= 125 °C
= 25 °C
For technical questions within your region, please contact one of the following:
1.7
T
J
1.1
= 100 °C
60
T
T
T
J
J
J
2.2
= 100 °C
= 100 °C
= 25 °C
1.3
US1A - US1G
US1J - US1M
80
2.7
1.5
100
3.2
1.7
100
100
0.1
10
10
1000
Figure 6. Typical Reverse Leakage Characteristics
1
0.01
1
100
0.01
0.1
Figure 8. Typical Transient Thermal Impedance
0.1
10
1
Vishay General Semiconductor
0
Figure 7. Typical Junction Capacitance
Percent of Rated Peak Reverse Voltage (%)
US1J - US1M
US1J - US1M
0.1
20
t - Pulse Duration (s)
Reverse Voltage (V)
1
US1A - US1G
T
J
40
= 150 °C
US1A thru US1M
1
T
J
60
= 125 °C
10
T
T
f = 1.0 MHz
V
J
J
sig
10
= 100 °C
= 25 °C
= 50 mVp-p
T
J
80
= 25 °C
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100
100
100
3