SSA34HE3/5AT Vishay, SSA34HE3/5AT Datasheet - Page 3

DIODE SCHOTTKY 3A 40V SMA

SSA34HE3/5AT

Manufacturer Part Number
SSA34HE3/5AT
Description
DIODE SCHOTTKY 3A 40V SMA
Manufacturer
Vishay
Datasheet

Specifications of SSA34HE3/5AT

Voltage - Forward (vf) (max) @ If
490mV @ 3A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
200µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Rectifiers
Peak Reverse Voltage
40 V
Forward Continuous Current
3 A
Max Surge Current
75 A
Configuration
Single
Forward Voltage Drop
0.49 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88883
Revision: 19-May-08
0.001
Figure 3. Typical Instantaneous Forward Characteristics
100
0.01
0.01
100
10
0.1
0.1
10
1
1
0
0
T
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
T
J
= 150 °C
Instantaneous Forward Voltage (V)
0.2
20
SSA33L
SSA34
0.065 (1.65)
0.049 (1.25)
0.060 (1.52)
0.030 (0.76)
0.090 (2.29)
0.078 (1.98)
T
T
J
J
0.4
= 125 °C
40
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
0.6
60
T
J
= 25 °C
DO-214AC (SMA)
T
J
= 25 °C
0.8
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
0.194 (4.93)
80
Cathode Band
SSA33L
SSA34
0.008 (0.203)
0 (0)
100
1.0
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
1000
0.066 (1.68)
100
10
0.060 (1.52)
MIN.
MIN.
1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
SSA33L
SSA34
Reverse Voltage (V)
0.208 (5.28)
REF.
SSA33L & SSA34
10
0.074 (1.88)
MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3

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