RGF1MHE3/67A Vishay, RGF1MHE3/67A Datasheet - Page 3

• Manufacturer Part Number: RGF1MHE3/67A
• Description: DIODE GPP 1A 1000V 500NS DO214BA
• Manufacturer: Vishay

Specifications of RGF1MHE3/67A

• Voltage - Forward (vf) (max) @ If: 1.3V @ 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Product: Switching Diodes
• Peak Reverse Voltage: 1000 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Recovery Time: 500 ns
• Forward Voltage Drop: 1.3 V
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88697
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.4
0
0.030 (0.76)
0.060 (1.52)
0.118 (3.00)
0.100 (2.54)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.066 (1.68)
0.040 (1.02)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
J
40
= 125 °C
DO-214BA (GF1)
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
1.0
T
Pulse Width = 300 µs
1 % Duty Cycle
0.167 (4.24)
J
Cathode Band
0.187 (4.75)
0.226 (5.74)
0.196 (4.98)
= 25 °C
T
T
J
J
0.006 (0.152) TYP.
60
= 100 °C
= 25 °C
0.0065 (0.17)
0.015 (0.38)
1.2
80
1.4
This datasheet is subject to change without notice.
100
1.6
0.114 (2.90)
0.094 (2.39)
0.108 (2.74)
0.098 (2.49)
100
100
0.1
10
10
1
1
0.01
1
0.066 (1.68)
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Fig. 6 - Typical Transient Thermal Impedance
0.060 (1.52)
Vishay General Semiconductor
MIN.
Fig. 5 - Typical Junction Capacitance
MIN.
0.1
Mounting Pad Layout
t - Pulse Duration (s)
Reverse Voltage (V)
RGF1A thru RGF1M
Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.220 (5.58)
10
1
REF.
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mV
0.076 (1.93)
MAX.
www.vishay.com
p-p
100
100
3