ES2F-E3/52T Vishay, ES2F-E3/52T Datasheet - Page 3

• Manufacturer Part Number: ES2F-E3/52T
• Description: DIODE ULTRA FAST 2A 300V SMB
• Manufacturer: Vishay

Specifications of ES2F-E3/52T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.1V @ 2A
• Voltage - Dc Reverse (vr) (max): 300V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 35 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 50 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.15V
• Reverse Recovery Time Trr Max: 2µs
• Forward Surge Current Ifsm Max: 50A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ES2F-E3/52TGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88588
Revision: 20-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
20
T
J
= 150 °C
0.6
0.096 (2.44)
0.084 (2.13)
0.086 (2.20)
0.077 (1.95)
0.060 (1.52)
0.030 (0.76)
40
[e-mail], [e-mail], [e-mail]
T
T
0.8
J
For technical questions within your region, please contact one of the following:
T
T
J
= 150 °C
J
J
= 125 °C
= 100 °C
= 25 °C
T
60
J
= 25 °C
T
J
1
= 100 °C
DO-214AA (SMB)
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
80
Cathode Band
1.2
0.008 (0.2)
100
1.4
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
200
160
120
100
80
40
10
0
1
0.1
25
Figure 5. Reverse Switching Characteristics
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
Mounting Pad Layout
50
1
Junction Temperature (°C)
0.220 REF
Reverse Voltage (V)
75
100
10
(2.159 MAX.)
0.085 MAX.
ES2F & ES2G
125
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
T
f = 1.0 MHz
V
at 1 A, 100 A/µs
at 5 A, 50 A/µs
at 1 A, 100 A/µs
J
sig
100
= 25 °C
= 50 mVp-p
150
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Q
t
rr
rr
1000
175
3