BYV26C-TR Vishay, BYV26C-TR Datasheet - Page 2

• Manufacturer Part Number: BYV26C-TR
• Description: DIODE AVALANCH GPP SOD-57
• Manufacturer: Vishay
• Series: -r

Specifications of BYV26C-TR

• Diode Type: Avalanche
• Voltage - Forward (vf) (max) @ If: 2.5V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.5 V
• Recovery Time: 30 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 2.5V
• Reverse Recovery Time Trr Max: 30ns
• Forward Surge Current Ifsm Max: 30A
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Fig. 2 - Max. Reverse Current vs. Junction Temperature
959729
959728
1000
100
600
500
400
300
200
100
0.1
10
0
1
0
0
R
thJA
V
= 45 K/W
R
T
T
40
40
= V
j
j
- Junction Temperature (°C)
- Junction Temperature (°C)
RRM
R
thJA
[e-mail], [e-mail],
= 100 K/W
80
80
For technical questions within your region, please contact one of the following:
I
120
120
F
= 0.5 A, I
V
I
R
TEST CONDITION
V
F
R
= V
= 1 A, T
amb
160
160
= V
Ultra Fast Avalanche Sinterglass
I
V
R
RRM
1000 V
RRM
200 V
400 V
600 V
800 V
R
I
R
= 100 μA
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
j
200
200
amb
= 175 °C
RRM
j
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
Diode
BYV26A
BYV26B
BYV26C
BYV26D
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26E
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
959730
959731
SYMBOL
0.001
0.01
[e-mail]
V
V
V
V
V
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
(BR)R
(BR)R
(BR)R
(BR)R
(BR)R
V
V
0
1
t
t
t
t
t
I
I
R
R
rr
rr
rr
rr
rr
F
F
0
0
T
j
= 175 °C
T
1
R
amb
thJA
40
MIN.
1100
V
300
500
700
900
- Ambient Temperature (°C)
= 100 K/W
F
2
-
-
-
-
-
-
-
-
-
- Forward Voltage (V)
T
j
= 25 °C
80
3
R
TYP.
thJA
4
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 45 K/W
Document Number: 86040
5
160
MAX.
Rev. 1.7, 04-Aug-10
6
100
2.5
1.3
30
30
30
75
75
5
-
-
-
-
-
200
7
UNIT
μA
μA
ns
ns
ns
ns
ns
V
V
V
V
V
V
V