S3M-E3/57T Vishay, S3M-E3/57T Datasheet

DIODE GPP 3A 1000V SMC

S3M-E3/57T

Manufacturer Part Number
S3M-E3/57T
Description
DIODE GPP 3A 1000V SMC
Manufacturer
Vishay
Datasheet

Specifications of S3M-E3/57T

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.15V @ 2.5A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
10µA @ 1000V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2.5µs
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.15 V @ 2.5 A
Recovery Time
2500 ns (Typ)
Forward Continuous Current
3 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
3A
Forward Voltage Vf Max
1.15V
Reverse Recovery Time Trr Max
2.5µs
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
S3M-E3/57TGITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S3M-E3/57T
Manufacturer:
Vishay Semiconductors
Quantity:
2 895
Part Number:
S3M-E3/57T
Quantity:
1 848
Part Number:
S3M-E3/57T
Manufacturer:
VISHAY
Quantity:
220
Part Number:
S3M-E3/57T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
S3M-E3/57T
Quantity:
270
Company:
Part Number:
S3M-E3/57T
Quantity:
70 000
Document Number: 88713
Revision: 08-Apr-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
T
V
I
J
I
F(AV)
FSM
RRM
V
I
max.
R
F
DO-214AB (SMC)
Surface Mount Glass Passivated Rectifier
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
A
= 25 °C unless otherwise noted)
50 V to 1000 V
150 °C
1.15 V
100 A
10 µA
3.0 A
L
= 103 °C
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
FEATURES
TYPICAL APPLICATIONS
For
power
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
S3A
SA
50
35
50
peak of 260 °C
and WEEE 2002/96/EC
use
S3B
100
100
SB
70
supplies,
Vishay General Semiconductor
in
S3D
200
140
200
SD
general
- 55 to + 150
S3G
400
280
400
100
SG
3.0
inverters,
purpose
S3J
600
420
600
SJ
S3A thru S3M
S3K
800
560
800
converters
SK
rectification
www.vishay.com
1000
1000
S3M
700
SM
UNIT
°C
V
V
V
A
A
and
of
1

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S3M-E3/57T Summary of contents

Page 1

... Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end SYMBOL S3A RRM V 35 RMS 103 ° F(AV) I FSM STG S3A thru S3M Vishay General Semiconductor in general purpose rectification supplies, inverters, converters S3B S3D S3G S3J S3K 100 200 400 600 800 70 ...

Page 2

... S3A thru S3M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad area ...

Page 3

... Cathode Band 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) S3A thru S3M Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Mounted on 0.20 x 0.27" ...

Page 4

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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