SBYV28-100-E3/54 Vishay, SBYV28-100-E3/54 Datasheet - Page 3

• Manufacturer Part Number: SBYV28-100-E3/54
• Description: DIODE 3.5A 100V 20NS DO-201AD
• Manufacturer: Vishay

Specifications of SBYV28-100-E3/54

• Voltage - Forward (vf) (max) @ If: 1.1V @ 3.5A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3.5A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Ultra Fast Recovery Rectifier
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 20 ns
• Forward Continuous Current: 3.5 A
• Max Surge Current: 90 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88737
Revision: 22-Oct-09
1000
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.4
Fig. 4 - Typical Reverse Leakage Characteristics
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
T
J
0.8
= 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
40
1.0
T
[e-mail], [e-mail],
J
= 25 °C
For technical questions within your region, please contact one of the following:
T
T
1.2
J
J
60
= 100 °C
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
SBYV28-50 thru SBYV28-200
100
MIN.
MIN.
60
50
40
30
20
10
10
0
1
0.1
0
[e-mail]
Vishay General Semiconductor
Fig. 5 - Reverse Switching Characteristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 4.0 A
= 30 V
25
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
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t
Q
rr
p-p
rr
100
175
3