SBYV28-200-E3/54 Vishay, SBYV28-200-E3/54 Datasheet - Page 3
![DIODE 3.5A 200V 20NS DO-201AD](/photos/21/96/219659/742928204-40_sml.jpg)
SBYV28-200-E3/54
Manufacturer Part Number
SBYV28-200-E3/54
Description
DIODE 3.5A 200V 20NS DO-201AD
Manufacturer
Vishay
Datasheet
1.SBYV28-100-E373.pdf
(4 pages)
Specifications of SBYV28-200-E3/54
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.1V @ 3.5A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
3.5A
Current - Reverse Leakage @ Vr
5µA @ 200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
20ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
3.5A
Forward Voltage Vf Max
1.1V
Reverse Recovery Time Trr Max
20ns
Forward Surge Current Ifsm Max
150A
Product
Ultra Fast Recovery Rectifier
Reverse Voltage
200 V
Forward Voltage Drop
1.1 V
Recovery Time
20 ns
Forward Continuous Current
3.5 A
Max Surge Current
90 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88737
Revision: 22-Oct-09
1000
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.4
Fig. 4 - Typical Reverse Leakage Characteristics
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
T
J
0.8
= 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
40
1.0
T
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
J
= 25 °C
For technical questions within your region, please contact one of the following:
T
T
1.2
J
J
60
= 100 °C
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
SBYV28-50 thru SBYV28-200
100
MIN.
MIN.
60
50
40
30
20
10
10
0
1
0.1
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Fig. 5 - Reverse Switching Characteristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 4.0 A
= 30 V
25
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
www.vishay.com
t
Q
rr
p-p
rr
100
175
3