EGP30A Fairchild Semiconductor, EGP30A Datasheet - Page 13

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EGP30A

Manufacturer Part Number
EGP30A
Description
DIODE FAST GPP 3A 50V DO-201AD
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of EGP30A

Voltage - Forward (vf) (max) @ If
950mV @ 3A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 50V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
0.95 V
Recovery Time
50 ns
Forward Continuous Current
3 A
Max Surge Current
125 A
Reverse Current Ir
5 uA
Power Dissipation
6.25 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EGP30A
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30A
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
MicroFET™
FDM3300NZ
FDM606P
MicroFET N-Channel
MicroFET P-Channel
Products
Min. (V)
BV
-20
20
DSS
Dual Common Drain
Config.
Single
10V
R
DS(ON)
0.023
0.026
4.5V
Max (Ω) @ V
2-8
0.028
0.033
2.5V
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
0.052
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
12
20
= 5V
I
D
6.8
10
(A)
MOSFETs
P
D
1.92
2.5
(W)

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