EGP30F Fairchild Semiconductor, EGP30F Datasheet - Page 26
EGP30F
Manufacturer Part Number
EGP30F
Description
DIODE FAST GPP 3A 300V DO-201AD
Manufacturer
Fairchild Semiconductor
Specifications of EGP30F
Voltage - Forward (vf) (max) @ If
1.25V @ 3A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP30F
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30F
Manufacturer:
VISHAY/威世
Quantity:
20 000
- Current page: 26 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
SOT-223
FDT439N
NDT453N
NDT451AN
FDT459N
FDT457N
HUF75309T3ST
HUFA75309T3ST
HUF75307T3ST
HUFA75307T3ST
NDT3055
NDT3055L
FQT13N06L
FQT13N06
IRLM120A
IRLM110A
FDT3612
IRFM120A
FQT7N10
FQT7N10L
IRFM110A
FDT461N
IRLM220A
IRLM210A
IRFM220B
FQT4N20L
FQT4N20
IRFM210B
FQT4N25
IRFM214B
SSM1N45B
FQT2P25
SFM9214
FQT3P20
SFM9210
FQT5P10
SFM9110
NDT2955
SOT-223 N-Channel
SOT-223 P-Channel
Products
Min. (V)
BV
-250
-250
-200
-200
-100
-100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
250
250
450
-60
30
30
30
30
30
55
55
55
55
60
60
60
60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.028
0.035
0.035
10V
0.06
0.07
0.07
0.09
0.09
0.11
0.14
0.12
0.35
0.35
1.35
1.75
4.25
1.05
0.1
0.1
0.2
0.4
0.8
1.4
1.5
2.7
1.2
0.3
–
–
–
–
–
2
2
4
4
3
R
DS(ON)
0.14@5V
0.22@5V
0.44@5V
0.13@6V
0.38@5V
0.8@5V
1.5@5V
1.4@5V
0.045
0.042
0.055
4.5V
0.05
0.09
0.12
2.5
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-21
0.058
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
10.7
10.7
10.7
10.2
2.36
10.3
GS
4.2
8.3
4.8
5.8
5.5
5.8
4.6
8.5
6.1
7.2
4.3
8.1
6.5
6.5
6.3
28
19
12
14
13
14
16
12
11
9
4
5
9
6
9
9
= 5V
I
D
1.13
0.77
0.85
0.85
0.77
0.83
0.64
0.55
0.45
0.67
6.3
7.2
6.5
2.6
2.6
2.8
2.8
2.3
1.5
3.7
2.3
1.7
1.7
1.5
0.4
1.1
0.5
0.5
2.5
8
5
3
3
4
4
1
1
(A)
MOSFETs
P
D
1.13
1.1
1.1
1.1
1.1
2.1
2.1
2.7
2.2
2.4
1.8
2.4
2.2
2.2
2.5
2.1
0.9
2.5
1.6
2.5
1.6
2.5
3
3
3
3
3
3
3
3
2
2
2
2
2
2
3
(W)
Related parts for EGP30F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: