B1100-13 Diodes Inc, B1100-13 Datasheet - Page 2

• Manufacturer Part Number: B1100-13
• Description: DIODE SCHOTTKY 100V 1A SMA
• Manufacturer: Diodes Inc

Specifications of B1100-13

• Voltage - Forward (vf) (max) @ If: 790mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Other names: B1100; B1100DITR; B1100TR; B1100TR

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Reverse Current
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range
Forward Voltage Drop
Leakage Current (Note 5)
Total Capacitance
Notes:
B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
0.01
1.0
4. Valid provided that terminals are kept at ambient temperature.
5. Short duration pulse test used to minimize self-heating effect.
0.1
10
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Characteristics
0.2
Characteristic
Characteristic
Characteristic
@T
0.4
A
= 25°C unless otherwise specified
@T
0.6
T = 25°C
I Pulse Width = 300µs
A
F
J
= 25°C unless otherwise specified
@ T
T
0.8
= 125°C
1.0
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Symbol
Symbol
T
V
Symbol
V
V
J,
R(RMS)
I
R
I
2 of 4
RRM
RWM
V
FSM
RRM
I
T
θ JT
O
V
C
I
R
STG
R
F
T
1,000
B170/B
B170/B
100
Min
10
70
49
-
-
-
-
0.1
Fig. 2 Total Capacitance vs. Reverse Voltage
Typ
-
-
-
-
V , DC REVERSE VOLTAGE (V)
B180/B
B180/B
R
80
56
-65 to +150
Max
0.79
0.69
1
0.5
5.0
80
1.0
1.0
30
25
B190/B
B190/B
Unit
mA
pF
V
90
63
B170/B - B1100/B
10
I
I
@ Rated V
@ Rated V
V
F
F
R
= 1.0A, T
= 1.0A, T
= 4V, f = 1MHz
Test Condition
B1100/B
B1100/B
100
70
© Diodes Incorporated
September 2010
R
R
A
A
, T
, T
= 25°C
= 100°C
100
A
A
= 25°C
= 100°C
°C/W
Unit
Unit
°C
V
V
A
A
A