ES3AHE3/57T Vishay, ES3AHE3/57T Datasheet - Page 3

• Manufacturer Part Number: ES3AHE3/57T
• Description: DIODE 3A 50V 20NS DO-214AB SMC
• Manufacturer: Vishay

Specifications of ES3AHE3/57T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 900mV @ 3A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 900mV
• Reverse Recovery Time Trr Max: 20ns
• Forward Surge Current Ifsm Max: 100A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88589
Revision: 27-Aug-07
10 000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
0
Percent of Rated Peak Reverse Voltage (%)
0.3
Instantaneous Forward Voltage (V)
20
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
T
0.060 (1.52)
0.030 (0.76)
J
= 125 °C
T
J
= 150 °C
0.5
T
T
J
J
T
= 150 °C
= 125 °C
J
40
= 100 °C
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0.7
For technical questions within your region, please contact one of the following:
T
J
T
= 25 °C
J
DO-214AB (SMC)
T
= 25 °C
60
J
= 100 °C
0.280 (7.11)
0.260 (6.60)
0.320 (8.13)
0.305 (7.75)
0.9
Cathode Band
0.008 (0.2)
80
1.1
0 (0)
100
1.3
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.126 (3.20) MIN.
30
20
10
50
40
0
0.1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.320 REF.
Reverse Voltage (V)
1
ES3A thru ES3D
0.185 (4.69) MAX.
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3