MBR760 Fairchild Semiconductor, MBR760 Datasheet
MBR760
Manufacturer Part Number
MBR760
Description
DIODE SCHOTTKY 7.5A 60V TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet
1.MBR750.pdf
(3 pages)
Specifications of MBR760
Voltage - Forward (vf) (max) @ If
750mV @ 7.5A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
7.5A
Current - Reverse Leakage @ Vr
500µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
7.5 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.75 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR760FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR760
Manufacturer:
DIODES
Quantity:
10 000
Company:
Part Number:
MBR760 C0
Manufacturer:
TAIWANSC
Quantity:
4 000
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
•
•
Symbol
*
Thermal Characteristics
Electrical Characteristics
Symbol
Absolute Maximum Ratings*
Symbol
V
I
I
T
T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
Schottky Rectifiers
F(AV)
FSM
R
RRM
P
R
R
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
stg
J
RRM
F
protection applications.
D
JA
JL
Maximum Repetitive Reverse Voltage
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage I
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
2.0 us Pulse Width, f = 1.0 KHz
Average Rectified Forward Current
8.3 ms Single Half-Sine-Wave
Parameter
Parameter
Parameter
I
I
I
F =
F =
F =
F =
7.5 A, T
15 A, T
15 A, T
7.5 A, T
MBR735 - MBR760
R
C
C
C
C
= 25 C
= 125 C
= 125 C
T
T
= 25 C
A
A
T
A
= 25 C
= 125 C
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
TO-220AC
1
2
735
735
35
0.57
0.84
0.72
0.1
1.0
15
-
745
745
45
-65 to +175
-65 to +150
Device
Value
Value
2.0
3.0
150
60
7.5
PIN 1 +
PIN 2 -
750
750
50
CASE Positive
inches (mm)
Dimensions
0.75
0.65
0.5
0.5
50
are in:
-
760
760
60
CASE
MBR735 - MBR760, Rev. C
+
-
Units
Units
Units
C/W
C/W
mA
mA
W
V
A
A
V
V
V
V
A
C
C
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MBR760 Summary of contents
Page 1
... 125 C A 1.0 PIN CASE PIN 2 - CASE Positive Dimensions are in: inches (mm) Value Units 745 750 760 7.5 A 150 A -65 to +175 C -65 to +150 C Value Units 2 C/W 3.0 C/W Device Units 745 750 760 0. 0.5 A MBR735 - MBR760, Rev. C ...
Page 2
... Percent of Rated Peak Reverse Voltage [%] F Figure 4. Reverse Current vs Reverse Voltage 100 10 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz º 125 C A MBR735-MBR745 º MBR750-MBR760 º MBR735-MBR745 MBR750-MBR760 100 120 140 0 100 Pulse Duration [s] MBR735 - MBR760, Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...