MBR1045 Fairchild Semiconductor, MBR1045 Datasheet

DIODE SCHOTTKY 10A 45V TO-220AC

MBR1045

Manufacturer Part Number
MBR1045
Description
DIODE SCHOTTKY 10A 45V TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MBR1045

Voltage - Forward (vf) (max) @ If
840mV @ 10A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.84 V @ 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
Features
Schottky Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
Symbol
Electrical Characteristics
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
V
I
I
P
R
R
F(AV)
FSM
R
RRM
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
stg
J
RRM
F
D
JA
JL
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
8.3 ms Single Half-Sine-Wave
2.0 us Pulse Width, f = 1.0 KHz
I
I
I
I
F =
F =
F =
F =
MBR1035 - MBR1060
Parameter
Parameter
Parameter
10 A, T
10 A, T
20 A, T
20 A, T
R
C
C
C
C
T
T
T
= 25 C
= 125 C
= 25 C
= 125 C
A
A
A
= 25 C
= 125 C
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
TO-220AC
1
2
1035
1035
35
0.57
0.84
0.72
1.0
-
1045
1045
45
-65 to +175
-65 to +150
PIN 1 +
PIN 2 -
Device
Value
Value
CASE Positive
150
0.1
10
15
2.0
2.0
60
1050
1050
50
0.80
0.70
0.95
0.85
CASE
0.5
+
1060
1060
60
MBR1035 - MBR1060, Rev. C
Units
Units
Units
mA
mA
C/W
C/W
V
A
A
V
V
V
V
A
C
C
W

Related parts for MBR1045

MBR1045 Summary of contents

Page 1

... Thermal Resistance, Junction to Lead R JL Electrical Characteristics Symbol Parameter V Forward Voltage Reverse Current @ rated Peak Repetitive Reverse Surge Current RRM 2.0 us Pulse Width 1.0 KHz 2001 Fairchild Semiconductor Corporation 1 2 TO-220AC T = 25°C unless otherwise noted A 1035 25°C unless otherwise noted A 1035 125 125 C ...

Page 2

... Percent of Rated Peak Reverse Voltage [%] [V] F Figure 4. Reverse Current vs Reverse Voltage 100 10 MBR1035-MBR1045 1 0.1 10 100 0.01 [V] R Figure 6. Thermal Impedance Characteristics Schottky Rectifier (continued 100 Number of Cycles at 60Hz MBR1035-MBR1045 º 125 C A MBR1050-MBR1060 º MBR1035-MBR1045 º MBR1050-MBR1060 100 120 0 100 Pulse Duration [s] MBR1035 - MBR1060, Rev. C ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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