ISL9R860S3ST Fairchild Semiconductor, ISL9R860S3ST Datasheet

ISL9R860S3ST

Manufacturer Part Number

ISL9R860S3ST

Description

DIODE STEALTH 600V 8A TO-263AB

Manufacturer

Fairchild Semiconductor

Series

Stealth™r

Datasheet

1.ISL9R860S3ST.pdf (8 pages)

Specifications of ISL9R860S3ST

Voltage - Forward (vf) (max) @ If

2.4V @ 8A

Voltage - Dc Reverse (vr) (max)

600V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

100µA @ 600V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

2.4 V

Recovery Time

30 ns

Forward Continuous Current

8 A

Max Surge Current

100 A

Reverse Current Ir

100 uA

Power Dissipation

85 W

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ISL9R860S3ST

Manufacturer:

INFINEON

Quantity:

12 500

Current page: 1 of 8
Download datasheet (326Kb)

ISL9R860P2, ISL9R860S3ST

8A, 600V Stealth™ Diode

General Description

The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are

Stealth™ diodes optimized for low loss performance in

high frequency hard switched applications. The

Stealth™ family exhibits low reverse recovery current

operating conditions.

This device is intended for use as a free wheeling or

boost diode in power supplies and other power

switching applications. The low I

reduce loss in switching transistors. The soft recovery

minimizes ringing, expanding the range of conditions

under which the diode may be operated without the use

of additional snubber circuitry. Consider using the

Stealth™ diode with an SMPS IGBT to provide the

most efficient and highest power density design at

lower cost.

Formerly developmental type TA49409.

Device Maximum Ratings

Package

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

RRM

CATHODE

(FLANGE)

Symbol

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

) and exceptionally soft recovery under typical

F(AV)

, T

FRM

RWM

FSM

RRM

PKG

AVL

STG

JEDEC TO-220AC

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current (T

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

Avalanche Energy (1A, 40mH)

Operating and Storage Temperature Range

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

ANODE

CATHODE

RRM

and short t

= 25°C unless otherwise noted

Parameter

phase

= 147

ANODE

N/C

JEDEC TO-263AB

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . t

• Fast Recovery . . . . . . . . . . . . . . . . . . . . t

• Operating Temperature . . . . . . . . . . . . . . . 175

• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

CATHODE

(FLANGE)

-55 to 175

Ratings

ISL9R860P2, ISL9R860S3ST Rev. C2

Symbol

600

100

300

260

October 2009

/ t

< 25ns

Units

°C

> 2.5

Related parts for ISL9R860S3ST

ISL9R860S3ST Summary of contents

Page 1

... SMPS FWD • Snubber Diode JEDEC TO-263AB N/C ANODE T = 25°C unless otherwise noted C Parameter o = 147 C) C October 2009 / t > 2 < 25ns rr Symbol K CATHODE (FLANGE) A Ratings Units 600 V 600 V 600 100 -55 to 175 °C 300 °C 260 °C ISL9R860P2, ISL9R860S3ST Rev ...

Page 2

... 390V 125° Tape Width Quantity - - 24mm 800 Min Typ Max T = 25° 100 125° 1 25°C - 2.0 2 125°C - 1.6 2 30V - 30V - 150 - - 2 6.5 - 195 - - 500 - - - 1. ISL9R860P2, ISL9R860S3ST Rev. C2 Units µ A/µs °C/W °C/W °C/W ...

Page 3

... CURRENT RATE OF CHANGE (A/µs) F and t Curves 390V 125° 16A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2 600 900 1000 900 1000 ...

Page 4

... RECTANGULAR PULSE DURATION (s) = 390V 125° 16A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µs) F 145 150 155 160 165 CASE TEMPERATURE ( NOTES: DUTY FACTOR PEAK θJA θ ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2 900 1000 /dt F 170 175 1 10 ...

Page 5

... R < 0.1Ω 50V 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q1 DUT Figure 14. Avalanche Energy Test Circuit ©2009 Fairchild Semiconductor Corporation CURRENT 0 SENSE + Figure 13 Figure 15. Avalanche Current and Voltage 0. Waveforms and Definitions rr V AVL Waveforms ISL9R860P2, ISL9R860S3ST Rev. C2 ...

Page 6

Mechanical Dimensions TO-220AC Dimensions in Millimeters ...

Page 7

Mechanical Dimensions 10.67 9. (2.12) 5.08 6.22 MIN 0.25 0.25 MAX (5.38) SEATING PLANE DETAIL A, ROTATED 90 SCALE: 2X TO-263AB -A- 1.68 1.00 9.65 8.38 10.00 (6.40) 1.78 MAX 1.78 1.14 ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

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