ISL9R860P2 Fairchild Semiconductor, ISL9R860P2 Datasheet - Page 4

DIODE STEALTH 600V 8A TO-220AC

ISL9R860P2

Manufacturer Part Number
ISL9R860P2
Description
DIODE STEALTH 600V 8A TO-220AC
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet

Specifications of ISL9R860P2

Voltage - Forward (vf) (max) @ If
2.4V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.4 V
Recovery Time
30 ns
Forward Continuous Current
8 A
Max Surge Current
100 A
Reverse Current Ir
100 uA
Power Dissipation
85 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 7. Reverse Recovery Softness Factor vs dI
Figure 9. Junction Capacitance vs Reverse Voltage
1200
1000
800
600
400
200
6
5
4
3
2
1
0
100
0.01
1.0
0.1
V
10
R
0.1
200
-5
= 390V, T
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
dI
F
300
/dt, CURRENT RATE OF CHANGE (A/µs)
SINGLE PULSE
J
I
I
F
F
= 125°C
= 16A
= 4A
V
400
R
, REVERSE VOLTAGE (V)
Figure 11. Normalized Maximum Transient Thermal Impedance
1
10
500
-4
600
I
F
= 8A
700
10
800
(Continued)
10
-3
900
t, RECTANGULAR PULSE DURATION (s)
1000
100
F
/dt
10
-2
Figure 8. Reverse Recovery Charge vs dI
350
300
250
200
150
100
10
50
8
6
4
2
0
140
100
Figure 10. DC Current Derating Curve
V
R
= 390V, T
200
145
dI
F
300
10
/dt, CURRENT RATE OF CHANGE (A/µs)
J
-1
150
T
= 125°C
C
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
400
I
I
I
F
F
F
= 16A
= 8A
= 4A
155
J
500
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
= P
DM
600
x Z
160
10
P
θJA
DM
0
1
700
/t
x R
2
165
θJA
o
C)
t
1
800
+ T
t
2
A
170
900
F
/dt
10
1000
1
175

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