ISL9R18120G2 Fairchild Semiconductor, ISL9R18120G2 Datasheet - Page 4

• Manufacturer Part Number: ISL9R18120G2
• Description: DIODE STEALTH 1200V 18A TO247-2
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9R18120G2

• Voltage - Forward (vf) (max) @ If: 3.3V @ 18A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 18A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 70ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-2
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 3.3 V @ 18 A
• Recovery Time: 70 ns
• Forward Continuous Current: 15 A
• Max Surge Current: 200 A
• Reverse Current Ir: 100 uA
• Power Dissipation: 125 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
Figure 7. Reverse Recovery Softness Factor vs
1200
1000
10
Figure 9. Junction Capacitance vs Reverse
800
600
400
200
9
8
7
6
5
4
3
200
0
0.01
400
dI
I
I
I
F
F
F
F
/dt, CURRENT RATE OF CHANGE (A/µs)
= 7.5A
= 30A
= 15A
0.1
V
600
R
, REVERSE VOLTAGE (V)
Voltage
dI
F
/dt
800
1
20
15
10
V
5
0
1000
R
80
Figure 11. DC Current Derating Curve
= 780V, T
10
90
1200
C
= 125
f = 1MH
T
100
o
C
C
, CASE TEMPERATURE (
Z
1400
100
110
Figure 10. Reverse Recovery Current and Times
Figure 8. Reverse Recovered Charge vs dI
120
-10.0
-10.5
-11.0
-11.5
-12.0
-12.5
3600
3200
2800
2400
2000
1600
1200
-8.5
-9.0
-9.5
800
25
200
V
130
o
R
C)
= 780V, T
t
RR
400
I
dI
50
F
140
F
vs Case Temperature
= 18A, V
/dt, CURRENT RATE OF CHANGE (A/µs)
T
I
RM(REC)
C
C
, CASE TEMPERATURE (
= 125
600
R
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B
150
75
o
= 780V, dI
C
800
F
100
/dt = 300A/µs
1000
o
C)
125
1200
I
I
I
F
F
F
= 15A
= 30A
= 7.5A
150
F
400
380
360
340
320
300
280
260
240
/dt
1400