RURG3060 Fairchild Semiconductor, RURG3060 Datasheet
RURG3060
Manufacturer Part Number
RURG3060
Description
DIODE ULTRAFAST 600V 30A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.RURG3060.pdf
(4 pages)
Specifications of RURG3060
Voltage - Forward (vf) (max) @ If
1.5V @ 30A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
250µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Through Hole, Radial
Package / Case
TO-247-2
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.5 V
Recovery Time
60 ns
Forward Continuous Current
30 A
Max Surge Current
325 A
Reverse Current Ir
250 uA
Power Dissipation
125 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Rectifier Type
Switching Diode
Peak Rep Rev Volt
600V
Avg. Forward Curr (max)
30A
Rev Curr
250uA
Peak Non-repetitive Surge Current (max)
325A
Forward Voltage
1.5V
Operating Temp Range
-65C to 175C
Package Type
TO-247
Rev Recov Time
60ns
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RURG3060
Manufacturer:
FSC
Quantity:
9 430
Company:
Part Number:
RURG3060
Manufacturer:
Intersil/FSC
Quantity:
12 500
Part Number:
RURG3060
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RURG3060BQV
Manufacturer:
HARRS
Quantity:
500
Part Number:
RURG3060C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RURG3060CC
Manufacturer:
Intersil/FSC
Quantity:
12 500
Part Number:
RURG3060CC
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
30A, 600V Ultrafast Diode
The RURG3060 is an ultrafast diode with soft recovery
characteristics (t
and is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimizes ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formerly developmental type TA09903.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RURG3060
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 130
o
C)
rr
< 55ns). It has low forward voltage drop
TO-247
PACKAGE
K
A
T
C
Data Sheet
= 25
RURG3060
o
C, Unless Otherwise Specified
BRAND
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
SIDE METAL)
CATHODE
(BOTTOM
January 2002
JEDEC STYLE 2 LEAD TO-247
STG
F(AV)
RWM
RRM
FRM
FSM
AVL
, T
R
D
J
RURG3060
-65 to 175
RURG3060
600
600
600
325
125
30
70
20
ANODE
RURG3060 Rev. B
CATHODE
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C
Related parts for RURG3060
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
RURG3060 Summary of contents
Page 1
... Data Sheet 30A, 600V Ultrafast Diode The RURG3060 is an ultrafast diode with soft recovery characteristics (t < 55ns). It has low forward voltage drop rr and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifi variety of switching power supplies and other power switching applications ...
Page 2
... I RM 1000 1.5 2 2.5 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE TYP MAX - 1.5 - 1.3 - 250 - 1.2 through 25 (See Figure 6 175 C 100 10 o 100 0.01 0 100 200 300 400 V , REVERSE VOLTAGE (V) R UNITS V V µ C/W 500 600 RURG3060 Rev. B ...
Page 3
... FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT CURRENT SENSE + FIGURE 8. AVALANCHE CURRENT AND VOLTAGE SQ. WAVE 100 120 140 T , CASE TEMPERATURE ( C FIGURE 4. CURRENT DERATING CURVE FIGURE 6. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 160 180 RURG3060 Rev. B ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...