ISL9R3060P2 Fairchild Semiconductor, ISL9R3060P2 Datasheet - Page 4

• Manufacturer Part Number: ISL9R3060P2
• Description: DIODE STEALTH 600V 30A TO-220AC
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9R3060P2

• Voltage - Forward (vf) (max) @ If: 2.4V @ 30A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 30A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.4 V @ 30 A
• Recovery Time: 45 ns
• Forward Continuous Current: 30 A
• Max Surge Current: 325 A
• Reverse Current Ir: 100 uA
• Power Dissipation: 200 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 7. Reverse Recovery Softness Factor vs
2.5
2.0
1.5
1.0
0.5
200
0.01
1.0
0.1
10-5
I
I
F
F
= 60A
= 15A
400
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
dIF/dt, CURRENT RATE OF CHANGE (A/ s)
SINGLE PULSE
600
Figure 10. Normalized Maximum Transient Thermal Impedance
I
F
dI
= 30A
800
10-4
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
1000
1000
800
600
400
200
V
R
0
= 390V, T
1200
0.1
(Continued)
10-3
J
1400
= 125°C
t, RECTANGULAR PULSE DURATION (s)
V
R
1600
, REVERSE VOLTAGE (V)
1
10-2
Figure 8. Reverse Recovery Charge vs dI
1200
1000
800
600
400
200
200
10
V
R
= 390V, T
400
dI
F
10-1
/dt, CURRENT RATE OF CHANGE (A/ s)
J
600
= 125°C
NOTES:
DUTY FACTOR: D = t
PEAK T
100
800
J
= P
DM
1000
x Z
I
100
I
I
F
F
F
P
ISL9R3060G2, ISL9R3060P2 Rev. C3
DM
= 60A
= 30A
= 15A
JA
1
/t
x R
2
1200
t
JA
1
t
2
+ T
1400
A
F
/dt
101
1600