150EBU04 Vishay, 150EBU04 Datasheet - Page 4

• Manufacturer Part Number: 150EBU04
• Description: DIODE UFAST 400V 150A POWLRTAB
• Manufacturer: Vishay

Specifications of 150EBU04

• Voltage - Forward (vf) (max) @ If: 1.3V @ 150A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 150A
• Current - Reverse Leakage @ Vr: 50µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 93ns
• Mounting Type: Through Hole, Radial
• Package / Case: PowerTab™, PowIRtab™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: *150EBU04; VS-150EBU04; VS-150EBU04; VS150EBU04; VS150EBU04

150EBU04
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
Fig. 5 - Maximum Allowable Case Temperature vs.
300
250
200
150
100
180
160
140
120
100
Fig. 6 - Forward Power Loss Characteristics
50
80
60
40
0
0
0
Square wave (D = 0.50)
Rated Vr applied
see note (1)
C
Average Forward Current - I
Average Forward Current - I
= T
Average Forward Current
50
50
J
- (Pd + Pd
100
100
F(AV)
R1
REV
x V
x I
150
150
DC
FM
) x R
R
(1 - D); I
For technical questions, contact:
at (I
thJC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
200
F
200
DC
F(AV)
F
(AV)
(AV)
;
(A)
R
(A)
/D) (see fig. 6);
at V
Ultrafast Soft Recovery Diode,
250
250
R1
= Rated V
150 A FRED Pt
R
[e-mail]
TM
Fig. 7 - Typical Reverse Recovery Time vs. dI
5000
4500
4000
3500
3000
2500
2000
1500
1000
250
200
150
100
500
50
0
1
1
Fig. 8 - Typical Stored Charge vs. dI
0
0
0
0
Vr = 200V
Tj = 125˚C
Tj = 25˚C
Vr = 200V
Tj = 125˚C
Tj = 25˚C
IF = 150A
IF = 75A
di
di
F
F
/dt (A/µs )
/dt (A/µs )
Document Number: 93003
IF = 150A
IF = 75A
Revision: 07-Jul-09
1
1
F
0
0
/dt
0
0
0
0
F
/dt