BAS20,215 NXP Semiconductors, BAS20,215 Datasheet - Page 3

• Manufacturer Part Number: BAS20,215
• Description: DIODE GEN-PURP 200V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS20,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 150V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Current - Average Rectified (io): 200mA (DC)
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1.7 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933502030215::BAS20 T/R::BAS20 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
RRM
R
tot
General purpose diodes
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
amb
t = 1 µs
t = 100 µs
t = 10 ms
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
BAS19; BAS20; BAS21
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
MIN.
120
200
250
100
150
200
200
625
9
3
1.7
250
+150
150
Product data sheet
MAX.
V
V
V
V
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT