BAS16,215 NXP Semiconductors, BAS16,215 Datasheet - Page 2

• Manufacturer Part Number: BAS16,215
• Description: DIODE SW 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS16,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1596-2; 933460620215; BAS16 T/R

NXP Semiconductors
2. Pinning information
BAS16_SER_5
Product data sheet
1.4 Quick reference data
Table 2.
[1]
Table 3.
[1]
Symbol
Per diode
V
I
t
Pin
BAS16; BAS16T; BAS16W
1
2
3
BAS16H; BAS16J; BAS316; BAS516
1
2
BAS16L
1
2
BAS16VV; BAS16VY
1
2
3
4
5
6
R
rr
R
When switched from I
The marking bar indicates the cathode.
Quick reference data
Pinning
Parameter
reverse voltage
reverse current
reverse recovery time
Description
anode
not connected
cathode
cathode
anode
cathode
anode
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
F
Rev. 05 — 25 August 2008
= 10 mA to I
R
= 10 mA; R
Conditions
V
R
= 80 V
L
= 100 ; measured at I
[1]
[1]
Simplified outline
1
6
1
1
Transparent
1
[1]
top view
001aab540
High-speed switching diodes
Min
-
-
-
5
2
3
006aaa144
001aab555
BAS16 series
2
R
2
4
3
= 1 mA.
2
Typ
-
-
-
Graphic symbol
© NXP B.V. 2008. All rights reserved.
1
1
1
Max
100
0.5
4
6
1
006aab040
006aab040
006aaa764
3
5
2
006aab106
Unit
V
ns
A
4
3
2 of 20
2
2
2