BAS16-G Comchip Technology, BAS16-G Datasheet - Page 3

• Manufacturer Part Number: BAS16-G
• Description: DIODE 75V 200MA SOT23
• Manufacturer: Comchip Technology

Specifications of BAS16-G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

+10 V
MDS0212004A
100
Surface Mount Switching Diode
1.0
0.1
10
50 Ω Output
Generator
0.2
Pulse
820 Ω
0.1 µF
0.4
Figure 2. Forward Voltage
2.0 k
100 µH
T A = 85°C
V F , Forward Voltage (V)
0.6
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10 mA.
Notes:
Notes:
I F
Rating and Characteristic Curves (BAS16)
DUT
2. Input pulse is adjusted so I R(peak) is equal to 10 mA.
3. t p » t rr
T A = 25°C
0.68
0.64
0.56
0.52
0.60
0.8
Figure 1. Recovery Time Equivalent Test Circuit
0
T A = – 40°C
0.1 µF
Oscilloscopes
50 Ω Input
1.0
Sampling
2
Figure 4. Capacitance
V R , Reverse Voltage (V)
1.2
V R
4
t r
0.001
0.01
Input Signal
10%
90%
1.0
0.1
10
0
t p
6
t
10
Figure 3. Leakage Current
V R , Reverse Voltage (V)
T A = 150°C
T A = 125°C
8
I R
I F
T A = 55°C
T A = 25°C
T A = 85°C
20
COMCHIP
COMCHIP
www.comchip.com.tw
(I F = I R = 10 mA; Measured
at I R(REC) = 1.0 mA)
30
Output Pulse
t rr
I R(REC) = 1.0 mA
40
t
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