BYV29B-600,118 NXP Semiconductors, BYV29B-600,118 Datasheet - Page 3

DIODE RECT 600V 9A SOT404

BYV29B-600,118

Manufacturer Part Number
BYV29B-600,118
Description
DIODE RECT 600V 9A SOT404
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV29B-600,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Voltage - Forward (vf) (max) @ If
1.25V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
9A
Current - Reverse Leakage @ Vr
50µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Surface Mount
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.45 V at 20 A
Recovery Time
60 ns
Forward Continuous Current
9 A
Max Surge Current
77 A
Reverse Current Ir
50 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057852118
BYV29B-600 /T3
BYV29B-600 /T3
Philips Semiconductors
9397 750 11884
Product data
Fig 1. Maximum forward power dissipation (square
(W)
Square current waveform
P F
I
F AV
20
15
10
5
0
current waveform) as a function of average
forward current.
0
=
I
F RMS
= 0.1
4
= 0.2
8
= 0.5
P
t p
12
T
= 1
I F(AV) (A)
003aaa446
=
t p
T
t
16
Rev. 01 — 11 August 2003
T mb(max)
100
125
150
112.5
137.5
( C)
Fig 2. Maximum forward power dissipation
(W)
Sinusoidal current waveform
a
P F
16
12
20
=
8
4
0
(sinusoidal current waveform) as a function of
average forward current.
I
------------------ -
0
I
F RMS
F AV
4
4
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2.8
BYV29B-600
Rectifier diode ultrafast
2.2
8
I F(AV) (A)
1.9
a = 1.57
003aaa447
12
100
T mb(max)
110
130
150
140
120
( C)
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