APT60DQ100BG Microsemi Power Products Group, APT60DQ100BG Datasheet - Page 3

• Manufacturer Part Number: APT60DQ100BG
• Description: DIODE ULT FAST 60A 1000V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT60DQ100BG

• Voltage - Forward (vf) (max) @ If: 3V @ 60A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 60A
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 255ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT60DQ100BGMI; APT60DQ100BGMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
6000
5000
4000
3000
2000
1000
250
200
150
100
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
I
V
RRM
J
R
F
F
T
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
25
V
120A
T
R
1.0
J
t
, REVERSE VOLTAGE (V)
rr
= 125°C
T
400
J
50
= 175°C
Q
10
rr
600
2.0
75
30A
800
100
T
J
3.0
= -55°C
t
rr
T
Q
1000
125
J
rr
100 200
= 25°C
60A
1200
4.0
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
100
50
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
30A
120A
600
600
100
120A
60A
60A
800
800
125
Duty cycle = 0.5
T
1000
1000
T
J
V
150
J
R
= 175°C
= 125°C
= 667V
30A
1200
1200
175