STTH1R04 STMicroelectronics, STTH1R04 Datasheet - Page 4

• Manufacturer Part Number: STTH1R04
• Description: DIODE ULT FAST 400V 1A DO-41
• Manufacturer: STMicroelectronics

Specifications of STTH1R04

• Voltage - Forward (vf) (max) @ If: 1.5V @ 1A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
70
65
60
55
50
45
40
35
30
25
20
15
10
10
5
0
1.E-02
1
10
1
Single pulse
S
cu
SMA
=1cm²
1.E-01
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMA
Junction capacitance versus
reverse voltage applied (typical
values)
Reverse recovery time versus
dI
F
/dt (typical values)
10
1.E+00
dI
F
t
V
/dt(A/µs)
P
100
(s)
R
(V)
T
T
j
j
=25 °C
1.E+01
=125 °C
100
1.E+02
V
OSC
F=1MHz
T
V
=30mV
j
=25°C
I
R
F
=320 V
= 1 A
RMS
1.E+03
1000
1000
Figure 6.
Figure 8.
Figure 10. Peak reverse recovery current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
36
32
28
24
20
16
12
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
4
0
1.E-03
10
10
V
V
Single pulse
I
R
I
R
S
F
F
=320 V
= 1 A
=320 V
cu
= 1 A
SMB
=1cm²
1.E-02
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMB
Reverse recovery charges versus
dI
versus dI
F
/dt (typical values)
1.E-01
F
/dt (typical values)
1.E+00
100
100
T
T
T
T
j
j
=125 °C
=125 °C
j
j
=25 °C
=25 °C
t
P
(s)
1.E+01
dI
dI
F
F
1.E+02
/dt(A/µs)
/dt(A/µs)
STTH1R04
1.E+03
1000
1000