STPS1H100A STMicroelectronics, STPS1H100A Datasheet - Page 2

• Manufacturer Part Number: STPS1H100A
• Description: DIODE SCHOTTKY 100V 1A SMA
• Manufacturer: STMicroelectronics

Specifications of STPS1H100A

• Voltage - Forward (vf) (max) @ If: 770mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 4µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.86 V at 2 A
• Maximum Reverse Leakage Current: 4 uA
• Operating Temperature Range: + 175 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 1A
• Rev Curr: 4uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 0.86V
• Operating Temp Range: -65C to 175C
• Package Type: SMA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3209-2

Characteristics
1
2/10
Characteristics
Table 2.
1.
Table 3.
Table 4.
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.54 x I
Symbol
Symbol
Symbol
I
R
V
V
F(RMS)
P
I
dV/dt
I
I
I
I
F(AV)
T
dPtot
---------------
R
RRM
FSM
RSM
th(j-l)
ARM
F
RRM
dTj
T
(1)
stg
(2)
j
<
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
Junction to lead
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
Surge non repetitive forward current t
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
F(AV)
(
1
Absolute ratings (limiting values)
–
Thermal resistance
Static electrical characteristics
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.08 I
Parameter
F
2
(RMS)
Parameter
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
t
t
t
p
p
p
p
L
=10 ms sinusoidal
= 2 µs F = 1 kHz square
= 100 µs square
= 1 µs T
= 160 °C δ = 0.5
(1)
V
I
I
F
F
R
= 1 A
= 2 A
= V
SMA
SMB
SMAflat
j
= 25 °C
RRM
Min.
-65 to + 175
Typ.
0.58
0.65
0.2
Value
10000
Value
1500
100
175
30
25
25
10
50
1
1
1
STPS1H100
Max.
0.77
0.62
0.86
0.5
0.7
4
°C/W
Unit
V/µs
Unit
Unit
°C
°C
W
mA
V
A
A
A
A
A
µA
V