STTH1R06 STMicroelectronics, STTH1R06 Datasheet - Page 5
![DIODE ULT FAST 1A 600V DO-41](/photos/5/36/53643/497-do-41__axial_series_sml.jpg)
STTH1R06
Manufacturer Part Number
STTH1R06
Description
DIODE ULT FAST 1A 600V DO-41
Manufacturer
STMicroelectronics
Datasheet
1.STTH1R06RL.pdf
(9 pages)
Specifications of STTH1R06
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
45ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
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STTH1R06
Figure 11. Transient peak forward voltage vs
Figure 13. Junction capacitance versus
Figure 15. Thermal resistance junction to ambient versus copper surface under each lead
100
10
25
20
15
10
1
5
0
1
0
V
C(pF)
FP
I =I
T =125°C
F
j
(V)
F(AV)
20
40
dI
reverse voltage applied
(typical values)
(epoxy FR4, Cu = 35 µm) (SMA)
F
/dt (typical values)
60
10
80
dI /dt(A/µs)
F
V (V)
100
R
140
130
120
110
100
90
80
70
60
50
40
30
20
10
120
0
0.0
R
th(j-a)
100
140
0.5
(°C/W)
160
1.0
V
OSC
F=1MHz
T =25°C
j
180
Doc ID 10203 Rev 5
=30mV
1.5
SMA
200
1000
2.0
S(cm²)
2.5
Figure 12. Forward recovery time vs dI
Figure 14. Thermal resistance junction to
200
180
160
140
120
100
110
100
80
60
40
20
90
80
70
60
50
40
30
20
10
3.0
0
0
0
0
R
t (ns)
fr
th(j-a)
3.5
20
1
(°C/W)
4.0
(typical values)
ambient versus copper surface
under each lead
40
2
4.5
60
(epoxy FR4, Cu = 35 µm) (DO-41, SMB)
3
SMB
5.0
80
Lleads = 10mm
4
dI /dt(A/µs)
DO-41
F
S(cm²)
100
5
120
6
140
Characteristics
7
160
V =1.1 x V max.
FR
8
T =125°C
I =I
F
j
F(AV)
F
180
F
/dt
9
200
10
5/9