STTH1R06U STMicroelectronics, STTH1R06U Datasheet - Page 4

• Manufacturer Part Number: STTH1R06U
• Description: DIODE TURBO2 600V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of STTH1R06U

• Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 45 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 20 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4406-2

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
140
130
120
110
100
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
1.E-01
0
0
S factor
Z
0
t (ns)
I =I
V =400V
T =125°C
th(j-c)
rr
F
j
R
Single pulse
S = 1cm
δ = 0.5
δ = 0.2
δ = 0.1
F(AV)
50
50
/R
2
th(j-c)
100
Relative variation of thermal
impedance junction to case vs
pulse duration (SMB)
Reverse recovery time versus dI
(typical values)
100
Reverse recovery softness factor
vs dI
1.E+00
I =2 x I
F
150
150
F
F(AV)
/dt (typical values)
200
200
dI /dt(A/µs)
dI /dt(A/µs)
1.E+01
F
F
t (s)
p
250
I =I
F
250
F(AV)
300
300
350
350
I =0.5 x I
1.E+02
F
δ
=tp/T
F(AV)
400
400
T
V =400V
T =125°C
450
450
Doc ID 10203 Rev 5
j
R
tp
1.E+03
500
500
F
/dt
Figure 6.
Figure 8.
Figure 10. Relative variations of dynamic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
9
8
7
6
5
4
3
2
1
0
250
225
200
175
150
125
100
25
75
50
25
0
0
I
RM
0
Q (nC)
V =400V
T =125°C
j
R
rr
(A)
V =400V
T =125°C
j
R
50
I =0.25 x I
F
50
100
Peak reverse recovery current vs
dI
Reverse recovery charges versus
dI
parameters vs junction temperature
F(AV)
100
50
F
F
/dt (typical values)
/dt (typical values)
150
S factor
I =0.5 x I
I
Q
F
150
RM
RR
F(AV)
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
F
T (°C)
I =I
F
250
250
j
75
F(AV)
300
300
I =2 x I
F
I =2 x I
F
I =0.5 x I
I =I
350
F
F
350
F(AV)
F(AV)
F(AV)
100
F(AV)
Reference: T =125°C
400
400
V =400V
STTH1R06
I =I
F
R
F(AV)
450
450
j
500
500
125