STPS3150 STMicroelectronics, STPS3150 Datasheet - Page 3

• Manufacturer Part Number: STPS3150
• Description: DIODE SCHOTTKY 3A 150V DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STPS3150

• Voltage - Forward (vf) (max) @ If: 820mV @ 3A
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2µA @ 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

STPS3150
Figure 3.
Figure 5.
Figure 7.
0.001
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
0.01
1.E-03
8
6
4
2
0
0.1
1
0.01
0
I (A)
I
M
F(AV)
P
P
ARM
I
M
ARM p
δ
=tp/T
(A)
(1µs)
(t )
25
δ
=0.5
t
T
Average forward current versus
ambient temperature (δ = 0.5)
(SMB flat)
Non repetitive surge peak forward
current versus overload duration
(maximum values) (DO-201AD)
Normalized avalanche power
derating versus pulse duration
0.1
tp
50
1.E-02
1
75
T
t (µs)
R
amb
p
t(s)
th(j-a)
=R
(°C)
th(j-l)
100
SMB flat
R
. S
10
th(j-a)
1.E-01
CU
=2.5 cm
=40°C/W
125
2
100
DO-201AD
150
T =125°C
T =25°C
T =75°C
a
a
a
1.E+00
1000
175
Figure 4.
Figure 6.
Figure 8.
12
11
10
50
45
40
35
30
25
20
15
10
1.2
0.8
0.6
0.4
0.2
1.E-03
1.E-03
9
8
7
6
5
4
3
2
1
0
5
0
1
0
I (A)
I (A)
25
M
M
P
P
ARM
I
I
M
M
ARM p
(25°C)
δ
δ
(t )
=0.5
=0.5
t
t
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
Non repetitive surge peak forward
current versus overload duration
(maximum values)
Normalized avalanche power
derating versus junction
temperature
50
1.E-02
1.E-02
75
t(s)
T (°C)
t(s)
j
100
1.E-01
1.E-01
Characteristics
125
SMB flat
T =125°C
T =125°C
SMB
T =25°C
T =75°C
a
T =25°C
T =75°C
L
a
a
L
L
1.E+00
1.E+00
150
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