STPS2H100U STMicroelectronics, STPS2H100U Datasheet - Page 3

• Manufacturer Part Number: STPS2H100U
• Description: DIODE SCHOTTKY 2A 100V SMB
• Manufacturer: STMicroelectronics

Specifications of STPS2H100U

• Voltage - Forward (vf) (max) @ If: 790mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 2A
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 75A
• Forward Voltage: 0.88@4AV
• Operating Temp Range: -65C to 175C
• Package Type: SMB
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6580-2; STPS2H100U

STPS2H100
Figure 1.
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
1
0
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
P
0.0
0
P
I
ARM
P
F(AV)
F(AV)
ARM
δ
0.2
=tp/T
(25 °C)
(A)
(W)
(T j )
25
T
0.4
50
Average forward power dissipation
versus average forward current
Average forward current versus
ambient temperature (δ = 0.5)
(SMB flat)
Normalized avalanche power
derating versus junction
temperature
tp
0.6
50
δ = 0.05
0.8
75
75
T
I
1.0
F(AV)
amb
R
T (°C)
th(j-a)
j
δ = 0.1
=R
(°C)
(A)
1.2
th(j-l)
100
100
1.4
SMB flat
R
. S
δ = 0.2
th(j-a)
CU
=2.5 cm
=40°C/W
125
1.6
2
δ
δ = 0.5
125
=tp/T
1.8
150
δ = 1
T
Doc ID 6115 Rev 7
2.0
tp
175
2.2
150
Figure 2.
Figure 4.
Figure 6.
0.001
0.01
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1.E-03
9
8
7
6
5
4
3
2
1
0
1
0.01
P
0
I (A)
I
M
F(AV)
P
ARM
ARM
I
M
δ
=tp/T
(1 µs)
(A)
(t p )
SMA
R
S
25
δ
th(j-a)
(CU)
=0.5
t
T
=1.5cm
0.1
=100°C/W
Average forward current versus
ambient temperature (δ = 0.5)
(SMA / SMB)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
tp
2
50
1.E-02
SMB
R
S
1
(CU)
th(j-a)
75
T
t (µs)
=1.5cm
amb
R
=80°C/W
p
t(s)
th(j-a)
(°C)
=R
2
th(j-I)
100
10
1.E-01
125
Characteristics
SMA
100
SMB
150
SMA
T =125°C
T =75°C
T =25°C
a
a
a
1.E+00
175
1000
3/10