DLA10IM800UC IXYS, DLA10IM800UC Datasheet
DLA10IM800UC
Manufacturer Part Number
DLA10IM800UC
Description
DIODE STD 800V 10A TO-252 DPAK
Manufacturer
IXYS
Datasheet
1.DLA10IM800UC.pdf
(3 pages)
Specifications of DLA10IM800UC
Voltage - Forward (vf) (max) @ If
1.1V @ 10A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
10µA @ 800V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Standard Recovery Rectifier
Configuration
Single Dual Anode
Reverse Voltage
800 V
Forward Voltage Drop
1.2 V at 20 A
Forward Continuous Current
10 A
Max Surge Current
88 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
800
Ifavm, Total, (a)
10
Ifavm, Per Diode, (a)
10
@ Tc, (°c)
140
Prsm, (kw)
-
Ifrms, (a)
20
Ifsm, 10 Ms, Tvj = 45°c, (a)
80
Vt0, (v)
0.80
Rt, (mohms)
15
Tvjm, (°c)
175
Rthjc, Max, (k/w)
3.15
Rthch, (k/w)
0.50
Package Style
DPak (TO-252)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DLA10IM800UC
Manufacturer:
IXYS
Quantity:
1 000
Standard Rectifier
Single Diode
Part number
DLA 10 IM 800 UC
Marking on Product: MARLUI
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
I
V
I
V
r
R
T
P
I
I t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
Features / Advantages:
R
FAV
FSM
2
F
RRM
F0
VJ
tot
F
J
thJC
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
Applications:
● Diode for main rectification
Conditions
V
V
I
I
I
I
rectangular, d = 0.5
t = 10 ms
t = 8,3 ms
t = 10 ms
t = 8,3 ms
t = 10 ms
t = 8,3 ms
t = 10 ms
t = 8,3 ms
V =
F
F
F
F
R
R
R
=
=
=
=
=
=
Data according to IEC 60747and per diode unless otherwise specified
tbd
800
800
10
20
10
20
1
3
V;
V
V
A
A
A
A
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
f = 1 MHz
2
T
T
T
T
T
T
T
T
T
V
T
V
T = 45°C
V = 0 V
T = 150°C
V = 0 V
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
= 25
=
=
=
=
= 140°C
= 175°C
=
= 45°C
= 0 V
= 150°C
= 0 V
=
150
150
DLA 10 IM 800 UC
25
25
25
25
● Housing:
V
I
V
Package:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
FAV
°C
°C
°C
°C
°C
°C
°C
RRM
F
min.
=
=
=
-55
R a t i n g s
TO-252 (DPak)
typ.
1.01 V
800
tbd
Backside: cathode
10
max.
1.10
1.20
1.01
1.10
0.80
3.15
V
A
advanced
800
175
0.1
37
37
31
32
10
10
15
45
80
88
72
80
20070320
Unit
K/W
m
mA
A s
A s
A s
A s
µA
pF
°C
W
2
2
2
2
Ω
V
V
V
V
V
A
V
A
A
A
A
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DLA10IM800UC Summary of contents
Page 1
... VJ P total power dissipation tot I max. forward surge current FSM value for fusing C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. © 2007 IXYS all rights reserved Applications: ● Diode for main rectification Conditions 800 V ...
Page 2
... In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Logo abcdef Marking on product DateCode XXX Assembly Code Ordering DLA 10 IM 800 UC Standard IXYS reserves the right to change limits, conditions and dimensions. © 2007 IXYS all rights reserved Conditions 1) per pin Semiconductor ...
Page 3
... IXYS reserves the right to change limits, conditions and dimensions. © 2007 IXYS all rights reserved 2.30 ±0.10 0.50 ±0.10 0.5 ±0.10 1.02 ±0.20 2.30 ±0.20 Data according to IEC 60747and per diode unless otherwise specified ...