STTH802G STMicroelectronics, STTH802G Datasheet - Page 3

• Manufacturer Part Number: STTH802G
• Description: DIODE ULT FAST 200V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH802G

• Voltage - Forward (vf) (max) @ If: 1.05V @ 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 6µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.05 V
• Recovery Time: 30 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 6 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

STTH802
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
RM
t
t
FP
rr
fr
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0.0
0.0
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
Dynamic characteristics
P = 5 W
P = 5 W
Peak current versus duty cycle
Forward voltage drop versus
forward current (maximum values)
0.5
0.2
P = 2 W
P = 2 W
0.3
1.0
Parameter
T
0.4
j
=150°C
P = 1 W
P = 1 W
T
0.5
1.5
j
=25°C
0.6
2.0
0.7
I
I
M
M
δ
d
=tp/T
=tp/T
0.8
2.5
V
T
T
FM
0.9
I
V
I
V
I
V
I
V
I
T
δ
(V)
F
F
F
F
F
tp
tp
j
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 8 A, dI
= 8 A, dI
= 8 A, dI
= 25 °C
= 30 V, T
= 30 V, T
= 160 V, T
1.0
3.0
= 1.1 x V
Test conditions
F
F
F
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs
/dt = 50 A/µs,
j
j
= 25 °C
= 25 °C
Fmax
j
= 125 °C
1.0
0.1
200
180
160
140
120
100
80
60
40
20
, T
1.E-03
0
0.0
j
= 25 °C
Single pulse
TO-220AC
D PAK
DPAK
2
Forward voltage drop versus
forward current (typical values)
Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
DPAK, D
0.5
1.E-02
1.0
T
j
=150°C
2
PAK)
Min.
1.5
T
j
=25°C
1.E-01
2.0
Typ
150
5.5
1.5
25
17
Characteristics
Max.
2.5
30
22
7
V
tp(s)
FM
(V)
1.E+00
3.0
Unit
ns
ns
A
V
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