STTH30R04G STMicroelectronics, STTH30R04G Datasheet - Page 4

• Manufacturer Part Number: STTH30R04G
• Description: DIODE ULT FAST 400V 30A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH30R04G

• Voltage - Forward (vf) (max) @ If: 1.45V @ 30A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 30A
• Current - Reverse Leakage @ Vr: 15µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Characteristics
4/10
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
5
5
4
4
3
3
2
2
1
1
0
1000
80
70
60
50
40
30
20
10
100
0
0
10
0
1
T
I
j
F
=125 °C
=30 A
50
2
100
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
4
Transient peak forward voltage
versus dI
reverse voltage applied (typical
values)
150
6
10
200
8
F
dI
S
/dt (typical values)
CU
F
/dt(A/µs)
V
250
(cm²)
R
10
(V)
CU
300
= 35 µm)
12
100
350
14
400
V
16
OSC
F=1MHz
T
=30mV
j
=25°C
450
18
D²PAK
RMS
1000
500
20
Figure 8.
Figure 10. Forward recovery time versus dI
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2000
1800
1600
1400
1200
1000
800
600
400
200
25
0
Q
RR
0
V
I
F
R
= 30 A
[T ]/Q
=320 V
j
RR
[T = 125° C] and I
Relative variations of dynamic
parameters versus junction
temperature
(typical values)
50
100
j
I
RM
Q
RR
75
200
RM
[T ]/I
T
j
(°C)
j
RM
[T = 125° C]
100
300
j
V
FR
125
400
STTH30R04
=1.1 x V
T
I
dI
F
j
=125°C
=30 A
F
/dt(A/µs)
F
max.
F
500
150
/dt