DHG20I600HA IXYS, DHG20I600HA Datasheet

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DHG20I600HA

Manufacturer Part Number
DHG20I600HA
Description
DIODE FRD SGL 600V 20A TO-247AD
Manufacturer
IXYS
Datasheet

Specifications of DHG20I600HA

Voltage - Forward (vf) (max) @ If
2.31V @ 20A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
20A
Current - Reverse Leakage @ Vr
30µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Through Hole
Package / Case
TO-247AD
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
3.08 V at 40 A
Recovery Time
35 ns
Forward Continuous Current
20 A
Max Surge Current
150 A
Reverse Current Ir
30 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
20
Ifavm, D = 0.5, Per Diode, (a)
20
@ Tc, (°c)
95
Ifsm, 10 Ms, Tvj=45°c, (a)
150
Vf, Max, Tvj =125°c, (v)
2.20
@ If, (a)
20
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =25°c, (a)
8.0
@ -di/dt, (a/µs)
450
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.90
Package Style
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG 20 I 600HA
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
E
I
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
Features / Advantages:
R
FSM
RM
AR
FAV
F
rr
VJ
RRM
F0
tot
J
AS
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
thJC
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
Definition
max. repetitive reverse voltage
reverse current
average forward current
for power loss calculation only
I
t
V
Conditions
V
V
I
I
I
rectangular, d = 0.5
I
-di
V
V
I
p
F
F
F
F
F
AS
R
R
R
R
A
F
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
=
=
=
=
= 10
=
=
=
=
=
=
=
/dt
switching devices
supplies (SMPS)
1.5·V
400
300
tbd
20
600
600
20
40
20
40
= 400 A/µs
ms (50 Hz), sine
A;
V
V;
A; L =
A
A
A
A
R
V
V
3
typ.;
f = 1 MHz
* Data according to IEC 60747and per diode unless otherwise specified
f = 10 kHz
100
µH
1
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
= 150 °C
=
= 45 °C
=
= 25
=
=
=
=
= 85 °C
= 25
= 125
= 25
= 125
=
125
125
25
25
25
25
25
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
Package:
TO-247AD
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
V
I
t
FAV
DHG 20 I 600HA
rr
min.
RRM
-55
R a t i n g s
=
=
=
typ.
tbd
35
8
600
Backside: cathode
20
35
max.
2.31
3.08
2.15
3.00
1.31
36.9
0.90
600
150
140
150
advanced
tbd
tbd
30
20
V
A
ns
3
Unit
K/W
m
mA
mJ
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A
A

Related parts for DHG20I600HA

DHG20I600HA Summary of contents

Page 1

... J E non-repetitive avalanche energy AS I repetitive avalanche current AR IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 3 1 Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Conditions per pin* L Dim Data according to IEC 60747and per diode unless otherwise specified ...

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