STTH1210D STMicroelectronics, STTH1210D Datasheet - Page 4

DIODE ULT FAST 1000V 12A TO220AC

STTH1210D

Manufacturer Part Number
STTH1210D
Description
DIODE ULT FAST 1000V 12A TO220AC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1210D

Voltage - Forward (vf) (max) @ If
2V @ 12A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
12A
Current - Reverse Leakage @ Vr
10µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
90ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
2 V
Recovery Time
48 ns
Forward Continuous Current
12 A
Max Surge Current
80 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5148-5

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Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
30
25
20
15
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
0
25
I
0
Q (µC)
0
RM
rr
V
T
(A)
j
R
=125°C
V
T
=600V
50
j
R
=125°C
50
I
=600V
F
=0.5 x I
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges
versus dI
Relative variations of dynamic
parameters versus junction
temperature
F(AV)
S
50
factor
I
Q
RM
RR
150
150
200
200
F
F
/dt (typical values)
/dt (typical values)
I
dI /dt(A/µs)
t
F
RR
= I
250
250
75
F
F(AV)
dI /dt(A/µs)
I
F
300
= 2 x I
300
F
T (°C)
F(AV)
j
350
350
I
F
= I
100
Reference: T
I
F(AV)
F
= 2 x I
400
400
V
I
I
F
F
R
=0.5 x I
= I
=600V
F(AV)
F(AV)
j
=125°C
450
450
F(AV)
500
500
125
Figure 6.
Figure 8.
Figure 10. Transient peak forward voltage
500
450
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
45
40
35
30
25
20
15
10
50
5
0
0
0
V
0
0
t (ns)
S factor
FP
rr
T
I
F
j
(V)
=125°C
= I
50
50
F(AV)
Reverse recovery time versus dI
(typical values)
(typical values)
versus dI
Softness factor versus dI
100
I
100
100
F
= 2 x I
F(AV)
dI /dt(A/µs)
150
150
F
200
200
200
F
/dt (typical values)
I
F
dI /dt(A/µs)
250
= I
250
F
F(AV
dI /dt(A/µs)
)
F
300
300
300
I
F
350
350
=0.5 x I
F(AV)
400
400
400
F
I
T
F
V
V
T
= 2 x I
STTH1210
R
j
=125°C
/dt
j
R
=125°C
=600V
=600V
450
450
F(AV)
500
500
500
F
/dt

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